SI2329DS MOSFET Transistor

The SI2329DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2329DS transistor as follows.

SI2329DS Transistor Specification

Transistor Code		SI2329DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		D9
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		480pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		0.8V

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