SI2327DS MOSFET Transistor

The SI2327DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2327DS transistor as follows.

SI2327DS Transistor Specification

Transistor Code		SI2327DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		D7
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.35Ohm
Power Dissipation (Maximum)	PD	0.75W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V

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