SI2324DS MOSFET Transistor

The SI2324DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2324DS transistor as follows.

SI2324DS Transistor Specification

Transistor Code		SI2324DS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23-3
Transistor SMD Code		D4*
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.195Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		2.9V

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