SI2323DS MOSFET Transistor

The SI2323DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2323DS transistor as follows.

SI2323DS Transistor Specification

Transistor Code		SI2323DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		D3*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.031Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		191pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS
Gate-Threshold Voltage (Maximum)		1V

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