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SI2323DDS MOSFET Transistor

The SI2323DDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2323DDS transistor as follows.

Circuit diagram symbol of the SI2323DDS transistor

SI2323DDS Transistor Specification

Transistor Code SI2323DDS
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code E4
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.039Ohm
Power Dissipation (Maximum) PD 0.96W
Drain-Source Capacitance 135pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 1V

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