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SI2312DS MOSFET Transistor

The SI2312DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2312DS transistor as follows.

Circuit diagram symbol of the SI2312DS transistor

SI2312DS Transistor Specification

Transistor Code SI2312DS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Transistor SMD Code C2*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 1.25W
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS

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