SI2311DS MOSFET Transistor

The SI2311DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2311DS transistor as follows.

SI2311DS Transistor Specification

Transistor Code		SI2311DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		C1
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	0.71W
Drain-Source Capacitance		485pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.8V

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