SI2309DS MOSFET Transistor

The SI2309DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2309DS transistor as follows.

SI2309DS Transistor Specification

Transistor Code		SI2309DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		A9
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.34Ohm
Power Dissipation (Maximum)	PD	1.25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.5nS
Gate-Threshold Voltage (Maximum)		1V

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