SI2309CDS MOSFET Transistor

The SI2309CDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2309CDS transistor as follows.

SI2309CDS Transistor Specification

Transistor Code		SI2309CDS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		N9
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.345Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		3V

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