SI2307DS MOSFET Transistor

The SI2307DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2307DS transistor as follows.

SI2307DS Transistor Specification

Transistor Code		SI2307DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		A7*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.064Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		126pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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