SI2305CDS MOSFET Transistor

The SI2305CDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2305CDS transistor as follows.

SI2305CDS Transistor Specification

Transistor Code		SI2305CDS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		N5
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	0.96W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		1V

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