SI2303BDS MOSFET Transistor

The SI2303BDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2303BDS transistor as follows.

SI2303BDS Transistor Specification

Transistor Code		SI2303BDS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Transistor SMD Code		L3*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		3V

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