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SI2301 MOSFET Transistor

The SI2301 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2301 transistor as follows.

Circuit diagram symbol of the SI2301 transistor

SI2301 Transistor Specification

Transistor Code SI2301
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code A1sHB
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 223pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 36nS
Gate-Threshold Voltage (Maximum) 0.45V

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