SI1965DH MOSFET Transistor

The SI1965DH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1965DH transistor as follows.

SI1965DH Transistor Specification

Transistor Code		SI1965DH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Transistor SMD Code		DE*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.39Ohm
Power Dissipation (Maximum)	PD	0.74W
Drain-Source Capacitance		41pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		1V

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