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SI1958DH MOSFET Transistor

The SI1958DH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1958DH transistor as follows.

Circuit diagram symbol of the SI1958DH transistor

SI1958DH Transistor Specification

Transistor Code SI1958DH
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-363
Transistor SMD Code CC*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 1.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.205Ohm
Power Dissipation (Maximum) PD 0.74W
Drain-Source Capacitance 26pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 1.6V

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