SI1926DL MOSFET Transistor

The SI1926DL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1926DL transistor as follows.

SI1926DL Transistor Specification

Transistor Code		SI1926DL
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Transistor SMD Code		PD*
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		7.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V

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