SI1922EDH MOSFET Transistor

The SI1922EDH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1922EDH transistor as follows.

SI1922EDH Transistor Specification

Transistor Code		SI1922EDH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Transistor SMD Code		CG*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.198Ohm
Power Dissipation (Maximum)	PD	0.74W
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		1V

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