SI1417EDH MOSFET Transistor

The SI1417EDH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1417EDH transistor as follows.

SI1417EDH Transistor Specification

Transistor Code		SI1417EDH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-363
Transistor SMD Code		BB*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	1W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1400nS
Gate-Threshold Voltage (Maximum)		0.45V

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