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SI1401EDH MOSFET Transistor

The SI1401EDH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1401EDH transistor as follows.

Circuit diagram symbol of the SI1401EDH transistor

SI1401EDH Transistor Specification

Transistor Code SI1401EDH
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-363
Transistor SMD Code BPX*
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.034Ohm
Power Dissipation (Maximum) PD 1.6W
Operating Junction Temperature (Maximum) 150°C
Rise Time 210nS
Gate-Threshold Voltage (Maximum) 1V

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