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SI1069X MOSFET Transistor

The SI1069X is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1069X transistor as follows.

Circuit diagram symbol of the SI1069X transistor

SI1069X Transistor Specification

Transistor Code SI1069X
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC-89
Transistor SMD Code Y*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 0.94A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.184Ohm
Power Dissipation (Maximum) PD 0.236W
Drain-Source Capacitance 78pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 31nS
Gate-Threshold Voltage (Maximum) 1.5V

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