SI1069X MOSFET Transistor

The SI1069X is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1069X transistor as follows.

SI1069X Transistor Specification

Transistor Code		SI1069X
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-89
Transistor SMD Code		Y*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.94A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.184Ohm
Power Dissipation (Maximum)	PD	0.236W
Drain-Source Capacitance		78pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		1.5V

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