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SI1050X MOSFET Transistor

The SI1050X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1050X transistor as follows.

Circuit diagram symbol of the SI1050X transistor

SI1050X Transistor Specification

Transistor Code SI1050X
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-89
Transistor SMD Code Q*
Drain-Source Voltage (Maximum) VDS 8V
Gate-Source Voltage (Maximum) VGS 5V
Drain Current (Maximum) ID 1.34A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.086Ohm
Power Dissipation (Maximum) PD 0.236W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 0.9V

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