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SI1035X MOSFET Transistor

The SI1035X is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1035X transistor as follows.

Circuit diagram symbol of the SI1035X transistor

SI1035X Transistor Specification

Transistor Code SI1035X
Transistor Type MOSFET
Control Channel Type NP-Channel
Package 1.6 MM X 1.6 MM • LO
Transistor SMD Code M
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 5V
Drain Current (Maximum) ID 0.18A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 0.25W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 0.4V

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