SI1013CX MOSFET Transistor

The SI1013CX is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1013CX transistor as follows.

SI1013CX Transistor Specification

Transistor Code		SI1013CX
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-89
Transistor SMD Code		6*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.76Ohm
Power Dissipation (Maximum)	PD	0.19W
Drain-Source Capacitance		15pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V

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