SI1012CR MOSFET Transistor

The SI1012CR is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1012CR transistor as follows.

SI1012CR Transistor Specification

Transistor Code		SI1012CR
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-75A
Transistor SMD Code		K*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.396Ohm
Power Dissipation (Maximum)	PD	0.24W
Drain-Source Capacitance		14pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1V

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