SI1011X MOSFET Transistor

The SI1011X is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1011X transistor as follows.

SI1011X Transistor Specification

Transistor Code		SI1011X
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-89
Transistor SMD Code		K*
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	0.48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.64Ohm
Power Dissipation (Maximum)	PD	0.19W
Drain-Source Capacitance		26pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		0.8V

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