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SHD239603 MOSFET Transistor

The SHD239603 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD239603 transistor as follows.

Circuit diagram symbol of the SHD239603 transistor

SHD239603 Transistor Specification

Transistor Code SHD239603
Transistor Type MOSFET
Control Channel Type N-Channel
Package SHD-6
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 460W
Drain-Source Capacitance 800pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V

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