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SHD239602 MOSFET Transistor

The SHD239602 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD239602 transistor as follows.

Circuit diagram symbol of the SHD239602 transistor

SHD239602 Transistor Specification

Transistor Code SHD239602
Transistor Type MOSFET
Control Channel Type N-Channel
Package SHD-6
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 1600pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 180nC

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