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SHD231008 MOSFET Transistor

The SHD231008 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD231008 transistor as follows.

Circuit diagram symbol of the SHD231008 transistor

SHD231008 Transistor Specification

Transistor Code SHD231008
Transistor Type MOSFET
Control Channel Type N-Channel
Package • 30 V, 75 Ω, 30 MA
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 6Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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