SHD226412R MOSFET Transistor

The SHD226412R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD226412R transistor as follows.

SHD226412R Transistor Specification

Transistor Code		SHD226412R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		678pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		164nS
Total Gate Charge		52nC

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