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SHD226410 MOSFET Transistor

The SHD226410 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD226410 transistor as follows.

Circuit diagram symbol of the SHD226410 transistor

SHD226410 Transistor Specification

Transistor Code SHD226410
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-257
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 570pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 60nC

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