SHD226309 MOSFET Transistor

The SHD226309 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD226309 transistor as follows.

SHD226309 Transistor Specification

Transistor Code		SHD226309
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-257
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.31Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		4V

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