SHD225613 MOSFET Transistor

The SHD225613 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD225613 transistor as follows.

SHD225613 Transistor Specification

Transistor Code		SHD225613
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4.5V

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