SHD218513B MOSFET Transistor

The SHD218513B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD218513B transistor as follows.

SHD218513B Transistor Specification

Transistor Code		SHD218513B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SHD-5B
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	430W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		37nS
Gate-Threshold Voltage (Maximum)		4V

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