SHD218508B MOSFET Transistor

The SHD218508B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SHD218508B transistor as follows.

SHD218508B Transistor Specification

Transistor Code		SHD218508B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SHD-5B
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44nS
Gate-Threshold Voltage (Maximum)		4V

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