SH8K12 MOSFET Transistor

The SH8K12 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SH8K12 transistor as follows.

SH8K12 Transistor Specification

Transistor Code		SH8K12
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4nC

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