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SFP640 MOSFET Transistor

The SFP640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SFP640 transistor as follows.

Circuit diagram symbol of the SFP640 transistor

SFP640 Transistor Specification

Transistor Code SFP640
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 430pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 4V

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