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SFF6N100S1 MOSFET Transistor

The SFF6N100S1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SFF6N100S1 transistor as follows.

Circuit diagram symbol of the SFF6N100S1 transistor

SFF6N100S1 Transistor Specification

Transistor Code SFF6N100S1
Transistor Type MOSFET
Control Channel Type N-Channel
Package MILPACK
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 240pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 44nS
Gate-Threshold Voltage (Maximum) 4V

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