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SFF10N100B MOSFET Transistor

The SFF10N100B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SFF10N100B transistor as follows.

Circuit diagram symbol of the SFF10N100B transistor

SFF10N100B Transistor Specification

Transistor Code SFF10N100B
Transistor Type MOSFET
Control Channel Type N-Channel
Package MILPACK2
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 310pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4.5V

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