The SES779 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the SES779 transistor as follows.
| Transistor Code | SES779 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | SMD-1 | |
| Drain-Source Voltage (Maximum) | VDS | 200V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 19A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.1Ohm |
| Power Dissipation (Maximum) | PD | 100W |
| Drain-Source Capacitance | 700pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 85nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
| Total Gate Charge | 100nC | |
UXPython is not the creator or an official representative of the SES779 MOSFET transistor. You can download the official SES779 MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
SEFN450 MOSFET Transistor
CS4905S MOSFET Transistor
IRF7N1405 MOSFET Transistor
CS1010 MOSFET Transistor
CS34P10 MOSFET Transistor
SEFN9140 MOSFET Transistor
CSR3410 MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.