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SES760 MOSFET Transistor

The SES760 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SES760 transistor as follows.

Circuit diagram symbol of the SES760 transistor

SES760 Transistor Specification

Transistor Code SES760
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-257
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 140W
Drain-Source Capacitance 208pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 86nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 140nC

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