SES760 MOSFET Transistor

The SES760 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SES760 transistor as follows.

SES760 Transistor Specification

Transistor Code		SES760
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		208pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		140nC

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