SEFY9130C MOSFET Transistor

The SEFY9130C is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SEFY9130C transistor as follows.

SEFY9130C Transistor Specification

Transistor Code		SEFY9130C
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-257
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		140nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		30nC

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