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SE2312 MOSFET Transistor

The SE2312 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SE2312 transistor as follows.

Circuit diagram symbol of the SE2312 transistor

SE2312 Transistor Specification

Transistor Code SE2312
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0318Ohm
Power Dissipation (Maximum) PD 0.35W
Drain-Source Capacitance 105pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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