SDF9N100JEB-D MOSFET Transistor

The SDF9N100JEB-D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SDF9N100JEB-D transistor as follows.

SDF9N100JEB-D Transistor Specification

Transistor Code		SDF9N100JEB-D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		4500pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		145nC

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