SDF200NA10HE MOSFET Transistor

The SDF200NA10HE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SDF200NA10HE transistor as follows.

SDF200NA10HE Transistor Specification

Transistor Code		SDF200NA10HE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		NA
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	900W
Operating Junction Temperature (Maximum)		150°C

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