RZR025P01 MOSFET Transistor

The RZR025P01 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RZR025P01 transistor as follows.

RZR025P01 Transistor Specification

Transistor Code		RZR025P01
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT3
Transistor SMD Code		YC
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.061Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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