RZQ050P01 MOSFET Transistor

The RZQ050P01 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RZQ050P01 transistor as follows.

RZQ050P01 Transistor Specification

Transistor Code		RZQ050P01
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Total Gate Charge		35nC

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