RZM002P02 MOSFET Transistor

The RZM002P02 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RZM002P02 transistor as follows.

RZM002P02 Transistor Specification

Transistor Code		RZM002P02
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		VMT3
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		10pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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