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RZE002P02 MOSFET Transistor

The RZE002P02 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RZE002P02 transistor as follows.

Circuit diagram symbol of the RZE002P02 transistor

RZE002P02 Transistor Specification

Transistor Code RZE002P02
Transistor Type MOSFET
Control Channel Type P-Channel
Package EMT3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 0.15W
Drain-Source Capacitance 10pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS

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