RYM002N05 MOSFET Transistor

The RYM002N05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RYM002N05 transistor as follows.

RYM002N05 Transistor Specification

Transistor Code		RYM002N05
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VMT3
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		6pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS

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