RXH125N03 MOSFET Transistor

The RXH125N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RXH125N03 transistor as follows.

RXH125N03 Transistor Specification

Transistor Code		RXH125N03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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